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Ge/Si islands in a three-dimensional island crystal studied by x-ray diffraction
An analysis of coplanar high-angle x-ray-diffraction data was performed and structural information on buried Ge islands forming a 3D island crystal was obtained. We islands and their surrounding Si matrix was deter...
BM - Fyzika pevných látek a magnetismus
- 2005 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Strain relief and shape oscillations in site-controlled coherent SiGe islands
SiGe island arrays resulting from Ge coverages of up to 38 monolayers grown space known for the growth of perfect island arrays. A cyclic development of the Ge content and island shape was observed while ...
BM - Fyzika pevných látek a magnetismus
- 2013 •
- Jx •
- Link
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Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction
Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction...
BM - Fyzika pevných látek a magnetismus
- 2003 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
X-ray reflectivity from self-assembled structures in Ge/Si superlattices
X-ray reflectivity from self-assembled structures in Ge/Si superlattices...
BM - Fyzika pevných látek a magnetismus
- 2001 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Diffuse x-ray reflectivity from self-assembled ripples with superimposed roughness in Si/Ge superlattices
Diffuse x-ray reflectivity from self-assembled ripples with superimposed roughness in Si/Ge superlattices...
BM - Fyzika pevných látek a magnetismus
- 2002 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Self-assembly of Ge quantum dots on periodically corrugated Si surfaces
The fabrication of regularly ordered Ge quantum dot arrays on Si surfaces usually requires extensive preparation processing, ensuring clean and atomically of ordered Ge quantum dots with highly tunable ordering parameters on rippled...
BM - Fyzika pevných látek a magnetismus
- 2015 •
- Jx •
- Link
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Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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In Situ X-Ray Scattering Study on the Evolution of Ge Island Morphology and Relaxation for Low Growth Rate: Advanced Transition to Superdomes (Article No. 045313)
Annotation in the original language is : Shape transitions and changes in elastic relaxation during the growth of Ge quantum dots were studied in-situ by x-ray scattering methods......
BM - Fyzika pevných látek a magnetismus
- 2009 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis
openings in a SiO(2) template. The stress in the 20-nm-wide Ge islands is relaxed. These techniques have been applied to partially embedded and high-Ge-content (x(Ge) = 0.87......
BM - Fyzika pevných látek a magnetismus
- 2011 •
- Jx •
- Link
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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Structural characterization of self-assembled semiconductor islands by three-dimensional X-ray diffraction mapping in reciprocal space
Structural characterization of self-assembled semiconductor islands by three-dimensional X-ray diffraction mapping in reciprocal space......
BM - Fyzika pevných látek a magnetismus
- 2008 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space
information on the Ge distribution within the buried islands and the strain interaction between the SiGe island and Si cap was obtained. It was found that the tensile strain on top of regular SiGe island arrays, i...
BM - Fyzika pevných látek a magnetismus
- 2012 •
- Jx •
- Link
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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