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Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements
acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V-Cd), and a deep trapWe studied, by current deep-level transient spectroscopy (I-DLTS), point a deep-acceptor complex [[Pb-Cd]...
BM - Fyzika pevných látek a magnetismus
- 2012 •
- Jx •
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Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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Bulk Resistance Decay in CdTe
time. The presented samples must have not one but four acceptor or donor levels, some of them are deep levels. We have discovered that the interactions between the valence band and deep acceptor ...
BM - Fyzika pevných látek a magnetismus
- 2009 •
- D
Rok uplatnění
D - Stať ve sborníku
Unique Deep Level in Spectroscopic CdZnTe: Compensation, Trapping, and Polarization
of the second (2-/1-) acceptor level of Cd vacancies in Cd1-xZnxTe(x approximate to 0.1). We their positions in the bandgap with that of the native energy-levels in CdTe quantum dots (QDs) and other II-VI semiconductors. I...
BM - Fyzika pevných látek a magnetismus
- 2012 •
- Jx •
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Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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Time-dependent electric field in Al/CdTe/Pt detectors
performance of the detectors, due to hole trapping and detrapping from deep acceptor levels that directly control the electric field distribution. In this work we present with the reverse current transients was also studie...
BM - Fyzika pevných látek a magnetismus
- 2015 •
- Jx •
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Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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Relaxation Time in CdTe Single Crystals
acceptor or donor levels, some of them are deep levels. We have discovered that the interactions between the valence band and deep acceptor levels or......
BM - Fyzika pevných látek a magnetismus
- 2008 •
- D
Rok uplatnění
D - Stať ve sborníku
Analysis of trapping and de-trapping in CdZnTe detectors by Pockels effect
In this contribution we introduce a method of deep level spectroscopy in semi samples, which is very sensitive to a change of occupancy of deep levels activation energies of the energy levels, their types ...
BM - Fyzika pevných látek a magnetismus
- 2016 •
- Jx •
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Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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Tellurium Secondary-Phase Defects in CdZnTe and their Association With the 1.1-eV Deep Trap
by current deep level transient spectroscopy (I-DLTS) and photoluminescence (PL). From the analysis, defect levels such as shallow acceptor/donor, A-centers, Cd vacancies and Te in the CZT samples. We also evaluat...
BM - Fyzika pevných látek a magnetismus
- 2016 •
- Jx •
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Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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Photoluminescence of CdTe and CdZnTe compounds doped with 2% selenium
in CdZnTeSe (CZTS) compared to CdTe and CZT which is known to form a deep level trap an additional acceptor-bound exciton in photoluminescence (PL). From the PL and inductively coupled plasma mass spectrometer (ICP/MS) ana...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2024 •
- Jimp •
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Jimp - Článek v periodiku v databázi Web of Science
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ON-state characteristics of proton irradiated 4H?SiC Schottky diode: The calibration of model parameters for device simulation
on modeling the doping compensation of the n-type epitaxial layer caused by the deep acceptor levels resulting from radiation damage. It is shown that the agreement, if the profiles of deep levels are cal...
BM - Fyzika pevných látek a magnetismus
- 2014 •
- Jx •
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Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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Electroluminescence in a semimetal channel at a single broken-gap heterointerface of type II.
to recombination of electrons from semimetal channel at the interface with holes on deep acceptor level at the interface. The second EL maximum is connecected......
BM - Fyzika pevných látek a magnetismus
- 2003 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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