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16 770 (0,181s)

Result

GaP-on-Si heterointerfaces and quasisubstrate growth studied in situ during MOVPE

It was demonstrated how time-resolved RAS measurements enable to in situ monitor the GaP nucleation on Si. The GaP sublattice can be inverted by a 'rotation' of the Si dimers prior nucleation or more Ga-rich growth...

BM - Fyzika pevných látek a magnetismus

  • 2016
  • O
Result

Atomic and electronic structure of GaP/Si(111), GaP/Si(110), and GaP/Si(113) interfaces and superlattices studied by density functional theory

The atomic structure of GaP(111)/Si(111), GaP(110)/Si(110), and GaP(113)/Si(113) heterointerfaces was studied by ab initio calculations employing the density functional theory (DFT). Relative form...

BM - Fyzika pevných látek a magnetismus

  • 2013
  • Jx
  • Link
Result

Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(1 0 0) interfaces: Interfacial chemical states and complete band energy diagrams

The epitaxial growth of the polar GaP(100) on the nonpolar Si(100) substrate epitaxial films were grown on As-terminated Si(100) substrates by MOVPE. The GaP(As)/Si of As atoms in the GaP lattice ...

Condensed matter physics (including formerly solid state physics, supercond.)

  • 2022
  • Jimp
  • Link
Result

A combined in situ RAS, in vacuo XPS and ab initio DFT study of the GaP/Si(100) heterointerface

We study the preparation and atomi order of the buried GaP/Si(001) heterointerfaces in situ with RAS, XPS, and ab initio DFT. We demonstrate that preparation of almost single domain Si(001) substrate succeeds in suppressing...

BM - Fyzika pevných látek a magnetismus

  • 2016
  • O
Result

Investigation of Defect Formation in Monolithic Integrated GaP Islands on Si Nanotip Wafers

electron diffraction of epitaxial GaP islands grown on Si nanotips embedded in SiO2 of the nanotips. Our results reveal that in both cases, the GaP islands align with the Si demonstrate an effective approach to mi...

Condensed matter physics (including formerly solid state physics, supercond.)

  • 2024
  • Jimp
  • Link
Result

Band bending at heterovalent interfaces: hard X-ray photoelectron spectroscopy of GaP/Si(0 0 1) heterostructures

GaP is a preferred candidate for the transition between Si and heterogeneous the atomic structure and electronic properties of GaP/Si(001) heterointerfaces utilizing of the GaP/Si(001) interfacial...

Condensed matter physics (including formerly solid state physics, supercond.)

  • 2021
  • Jimp
  • Link
Result

Ab initio density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces

The atomic and electronic band structures of GaP/Si(001) heterointerfaces were of abrupt interfaces and mixed interfaces with Si substitutional sites within a few GaP layers were derived. The electronic band struct...

BM - Fyzika pevných látek a magnetismus

  • 2016
  • Jx
  • Link
Result

GaP-on-Si(100) heterointerfaces studied in situ

We give an overview on how we combine optical in situ RAS during industrially scalable growth processes by MOVPE with electron-based in vacuo surface science analytics in order to study the GaP/Si(001) heterointerface formation and ...

BM - Fyzika pevných látek a magnetismus

  • 2016
  • O
Result

Time-resolved in situ spectroscopy during formation of the GaP/Si(100) heterointerface

signal evolves during pulsed GaP nucleation on single-domain Si(100) surfaces. This dielectric anisotropy agrees well with the one calculated for buried GaP/Si(100) interfaces from differently thick GaP e...

BM - Fyzika pevných látek a magnetismus

  • 2015
  • Jx
  • Link
Result

Hard X-ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces

We present a study of buried GaP/Si(001) heterointerfaces by hard X-ray photoelectron spectroscopy. Well-defined thin (4–50 nm) GaP films were grown on Si(001 offsets with the GaP film thickness and on the...

Condensed matter physics (including formerly solid state physics, supercond.)

  • 2020
  • Jimp
  • Link
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