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Bravais lattice diversity of III-V semiconductors: A comparative study of GaSb(001) and GaAs(001) surface reconstructions
Lattice distortion of the (4x3) reconstruction family of GaSb(001) is compared to the GaAs(001) beta-(2x4) and c(4x4) reconstructions. Low energy differences would allow for the existence of phase shifted reconstruction reg...
BM - Fyzika pevných látek a magnetismus
- 2009 •
- O
Rok uplatnění
O - Ostatní výsledky
Ab initio study of one-dimensional disorder on III-V semiconductor surfaces
Atomic disorder on GaSb(001) and GaAs(001) surfaces is studied by ab initio calculations within density functional theory (DFT). Surface energies are computed for GaSb(001)and GaAs(001) reconstruc...
BM - Fyzika pevných látek a magnetismus
- 2010 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Ab initio study of GaSb(001)-c(2 x 10) and (2 x 10) reconstructions
GaSb(001) surface reconstructions with the experimentally observed (2 x10) and c(2x10) symmetry are investigated employing density functional theory. Special attention is given to the incorporation of Ga atoms during the initial ste...
BM - Fyzika pevných látek a magnetismus
- 2009 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Stoichiometry and Bravais lattice diversity: an ab initio study of the GaSb(001) surface
We study the family of GaSb(001)-(4x3) reconstructions by ab initio density-functional theory. For each possible surface stoichiometry between the well-known Sb-poor alpha(4x3) and Sb-rich beta(4x3) phases, we find thermodynamically...
BM - Fyzika pevných látek a magnetismus
- 2009 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
GaSb(001) surface reconstructions measured at the growth front by furface X-ray diffraction
Surface x-ray diffraction was employed, in situ, to measure the GaSb(001)-(1 x 5) and (1 x 3) surface phases under technologically relevant growth conditions. We measured a large set of fractional-order in-plane diffraction peaks ar...
BM - Fyzika pevných látek a magnetismus
- 2008 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Staircase model of GaSb(001) (1x3) and c(2x6) phases
We show that the (1x3) and c(2x6) diffraction patterns of the reconstructed GaSb(001) surface are the result of characteristic disorder in the positions of the (4x3) reconstructed surface unit cells. The reconstructed cells form uni...
BM - Fyzika pevných látek a magnetismus
- 2008 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Raman scattering study of type II GaInAsSb/InAs heterostructures.
Ga 1-x In x As y Sb 1-y quaternary solid solutions lattice-matched to the InAs (001) substrate with composition in range 0.06.le.x.le.0.22 were grown by liquid phase epitaxy. The assignment of the observed modes to GaAs-like and (GaSb
BM - Fyzika pevných látek a magnetismus
- 2002 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Growth-rate induced defects in GaSb
Growth-rate induced defects in GaSb...
BM - Fyzika pevných látek a magnetismus
- 2004 •
- D
Rok uplatnění
D - Stať ve sborníku
Preparation and study of transport mechanism in GaAs/GaSb heterostructures
Preparation and study of transport mechanism in GaAs/GaSb heterostructures...
BM - Fyzika pevných látek a magnetismus
- 2001 •
- D
Rok uplatnění
D - Stať ve sborníku
Transport mechanism and spectral characteristics of GaSb/GaAs heterostructures prepared by MOVPE.
The purpose of our work was the evaluation of GaSb/GaAs heterostructures grown on GaAs substrateas for the thermovoltaics.heterojunctions p-GaSb/n-GaAs with p-layer prepared by MOVPE method at growth temperatures from 500 to 560 o C...
BM - Fyzika pevných látek a magnetismus
- 2002 •
- D
Rok uplatnění
D - Stať ve sborníku
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