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66 599 (0,147s)

Result

Bravais lattice diversity of III-V semiconductors: A comparative study of GaSb(001) and GaAs(001) surface reconstructions

Lattice distortion of the (4x3) reconstruction family of GaSb(001) is compared to the GaAs(001) beta-(2x4) and c(4x4) reconstructions. Low energy differences would allow for the existence of phase shifted reconstruction reg...

BM - Fyzika pevných látek a magnetismus

  • 2009
  • O
Result

Ab initio study of one-dimensional disorder on III-V semiconductor surfaces

Atomic disorder on GaSb(001) and GaAs(001) surfaces is studied by ab initio calculations within density functional theory (DFT). Surface energies are computed for GaSb(001)and GaAs(00...

BM - Fyzika pevných látek a magnetismus

  • 2010
  • Jx
Result

Ab initio study of GaSb(001)-c(2 x 10) and (2 x 10) reconstructions

GaSb(001) surface reconstructions with the experimentally observed (2 x10) and c(2x10) symmetry are investigated employing density functional theory. Special attention is given to the incorporation of Ga atoms during the in...

BM - Fyzika pevných látek a magnetismus

  • 2009
  • Jx
Result

Stoichiometry and Bravais lattice diversity: an ab initio study of the GaSb(001) surface

We study the family of GaSb(001)-(4x3) reconstructions by ab initio density-functional theory. For each possible surface stoichiometry between the well-known Sb-poor to the beta2(2x4) reconstructed GaAs(001) su...

BM - Fyzika pevných látek a magnetismus

  • 2009
  • Jx
Result

GaSb(001) surface reconstructions measured at the growth front by furface X-ray diffraction

Surface x-ray diffraction was employed, in situ, to measure the GaSb(001)-(1 x 5) and (1 x 3) surface phases under technologically relevant growth conditions from the superstructure of the surface reconstr...

BM - Fyzika pevných látek a magnetismus

  • 2008
  • Jx
Result

Staircase model of GaSb(001) (1x3) and c(2x6) phases

We show that the (1x3) and c(2x6) diffraction patterns of the reconstructed GaSb(001) surface are the result of characteristic disorder in the positions of the (4x3) reconstructed surface unit cells. The reconstruc...

BM - Fyzika pevných látek a magnetismus

  • 2008
  • Jx
Result

Etching behavior of GaAs, GaSb, InAs, and InSb in aqueous H2O2-HBr-ethylene glycol solutions

The chemical interaction of GaAs, GaSb, InAs, and InSb single crystals with H2O2-HBr-ethylene glycol bromine-releasing etchants has been studied under of polishing and nonpolishing solutions, assessed the surface condition of the cr...

CA - Anorganická chemie

  • 2012
  • Jx
  • Link
Result

Morphological instability in InAs/GaSb superlattices due to interfacial bonds

Synchrotron x-ray diffraction is used to compare the misfit strain and composition in a self-organized nanowire array in an InAs/GaSb superlattice with InSb interfacial bonds to a planar InAs/GaSb superlattice with GaAs interfacial ...

BM - Fyzika pevných látek a magnetismus

  • 2005
  • Jx
Result

Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy

A non-destructive method of relialiblity prediction for PN junction microelectronic devices is presented. Transport and noise characteristic of forward biased semiconductor lasers diodes GaSb based VCSE(Vertical Cavity Surface Emitt...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2010
  • Jx
Result

Optical Characterization of the VCSEL Diodes Based on GaSb

Vertical Cavity Surface Emitting Lasers (VCSELs) have been characterized using Fourier transform emission spectroscopy and compared. Laser sensitive detection - laser absorption together with high resolution Fourier transform infrared techni...

CF - Fyzikální chemie a teoretická chemie

  • 2011
  • D
  • Link
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