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The Spectral Linewidth of Tunable Semiconductor InAsSb/InAsSbP Lasers Emitting at 3.2-3.6 .mu.m (2800-3100 cm -1 ).
A new method was used to measure the width of emission lines of a new type of semiconductor laser with composition InAsSb/InAsSbP. The estimated spectral emission linewidths varied in the range 10-30 MHz in dependence of the current passing ...
CF - Fyzikální chemie a teoretická chemie
- 2001 •
- Jx
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Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Room-temperature electroluminescence of AlSb/InAsSb single quantum wells grown by Metal Organic Vapour Phase Epitaxy
Intense mid-infrared (?~2 ?m) room temperature electroluminescence from Metal Organic Vapour Phase Epitaxy grown type-I single AlSb/InAsSb/AlSbquantum wells is reported. Four-times increase of the emission intensity with temperature increasi...
BM - Fyzika pevných látek a magnetismus
- 2006 •
- Jx
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Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
The Expansion of Line-width of Tunable Lasers on Basis of InAsSbP/InAsSb/InAsSbP Heterostructures.
Original scientific paper dealing with The Expansion of Line-width of Tunable Lasers on Basis of InAsSbP/InAsSb/InAsSbP Heterostructures.
CF - Fyzikální chemie a teoretická chemie
- 2000 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy
Anodized layers on InAsSb, InSb, and InAs surfaces are characterized using phase modulation spectroscopic ellipsometry in a wide spectral range from 0.6 to 6.5 eV. Single crystal InAs0.04Sb0.94 layer was grown using melt-epitaxy (ME). Optica...
BH - Optika, masery a lasery
- 2008 •
- Jx
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Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
MIR LED-like structures with high temperature superlinear luminescence
AlSb/InAsSb/AlSb based heterostructures and nanostructures with quantum wells (QWs) grown on GaSb are promising materials for the optoelectronic devices for near- and mid-IR spectral regions. GaSb-based structures with a deep AlSb/InAsSb...
BM - Fyzika pevných látek a magnetismus
- 2016 •
- O
Rok uplatnění
O - Ostatní výsledky
Growth of deep InAsSb electron QW with AlSb barriers on GaSb substrate
Superlinear electroluminescence with anomalous temperature dependence was observed on GaSb based structures with AlSb barriers and deep InAsSb quantum well in InAsSb QW. Suggested AlAs like interfaces should improve the hole localiz...
BM - Fyzika pevných látek a magnetismus
- 2013 •
- D
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D - Stať ve sborníku
MOVPE prepared AlSb/InAsSb/AlSb deep quantum well structures used for the two-band superlinear luminescence
AlSb/InAsSb/AlSb samples with three different Sb concentrations in InAsSb QW were prepared by MOVPE. These QW structures with intensive two-band electroluminescence were measured in the photon energy range of 0.5 - 0.8 eV under 20-2...
BM - Fyzika pevných látek a magnetismus
- 2015 •
- O
Rok uplatnění
O - Ostatní výsledky
Current Tunable 3.3 .mu.m Lasers with a Narrow Emission Linewidth.
Properties of current tunable diode lasers with a narrow emission livewidht based on InAsSb/InAsSbP double heterostructure with the wide-stripe cavity emitting within 3.2-3.3 .mu.m spectral range....
CF - Fyzikální chemie a teoretická chemie
- 2001 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Photoelectric and luminescence properties of GaSb-based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy
The luminescence and photoelectric properties of heterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates by metalorganic vapor-phase epitaxy are investigated. Intense superlinear luminescence and increas...
BM - Fyzika pevných látek a magnetismus
- 2013 •
- Jx •
- Link
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Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
InAsSb/InAsSbP Current-tunable Laser with Narrow Spectral Line Width.
The article describes the manufacture and testing of a new type of semiconductor laser working at low temperatures (12-100K) in the wavelength range 3200-3300 cm-1. This kind of laser can be tuned in the modal range up to 6 cm-1 and is characterized ...
CF - Fyzikální chemie a teoretická chemie
- 2003 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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