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Experimental evidence of the minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface
Charge transport was studied by means of I-V characteristics in different SI-GaAs-based structures. Supression of the reverse current and increase of the breakdown voltage in the system with the LT-MBE layer has been explained by a blocking ...
BM - Fyzika pevných látek a magnetismus
- 2002 •
- D
Rok uplatnění
D - Stať ve sborníku
Ultrahigh vacuum chamber for preparation of nanostructures by molecular beam epitaxy (MBE)
UHV chamber equipped by two effusion cells (Co, Cu), manipulator, device for characterization of the atomic structure and surface morphology (RHEED)......
BM - Fyzika pevných látek a magnetismus
- 2007 •
- X
Rok uplatnění
X - Nezařazeno
Magneto-optical spectroscopy of strained La2/3Sr1/3MnO3 thin films grown by 'laser MBE'.
Magneto-optical spectroscopy of strained La2/3Sr1/3MnO3 thin films grown by 'laser MBE'.
BM - Fyzika pevných látek a magnetismus
- 2004 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy
MBE (molecular beam epitaxy) technology. The results demonstrate that the lasers prepared by new MBE technology have higher quality than the samples prepared by using the classic MBE technology....
JA - Elektronika a optoelektronika, elektrotechnika
- 2015 •
- Jx •
- Link
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
MBE Growth and Structural Characterization of SiC/SiGe Superlattices
BM - Fyzika pevných látek a magnetismus
- 1997 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Study of MBE Fe/Ag multilayer systems with nuclear orientation
BM - Fyzika pevných látek a magnetismus
- 1996 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Magnetooptical studies of ultrathin MBE grown Fe/Ag(001) wedges
BM - Fyzika pevných látek a magnetismus
- 1996 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Low Noise as a Diagnostic Tool for GaSb based Laser Diodes Prepared by Molecular Beam Epitaxy
Trasnport and noise characteristics of forward biased semiconductor lasers diodes GaSb based VCSE(Vertical Cavity Surface Emitting) laser were prepared by MBE (Molecular Beam Epitaxy) were measured in order to evaluate the new MBE t...
JA - Elektronika a optoelektronika, elektrotechnika
- 2012 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Low noise as a diagnostic tool for GaSb based laser diodes prepared by Molecular Beam Epitaxy
Trasnport and noise characteristics of forward biased semiconductor lasers diodes GaSb based VCSE (Vertical Cavity Surface Emitting) laser were prepared by MBE (Molecular Beam Epitaxy) were measured in order to evaluate the new MBE ...
BM - Fyzika pevných látek a magnetismus
- 2012 •
- D
Rok uplatnění
D - Stať ve sborníku
Substrate temperature changes during molecular beam epitaxy growth of GaMnAs
increase of the substrate temperature during the low-temperature MBE growth of GaMnAs layers. With the help of numerical simulations we explain the effect as a consequence of changing absorption/emission characteristics of the growing epilay...
BM - Fyzika pevných látek a magnetismus
- 2007 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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