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SOI / Silicon on Insulator on Insulator

ONeLearning Course structured to 4 chapters: Introduction, Direct Wafer Bonding Basics, Bond and Grind-cack, Bond and Etch-back, References.

JJ - Ostatní materiály

  • 2014
    • •
  • A
Result

*Bending test on silicone hollow insulator

*The reports contains results of bending test on silicone hollow insulator...

JI - Kompositní materiály

  • 2013
    • •
  • Vsouhrn
Result

Influence of cleaning of epoxy resin insulators surface on insulation properties

This paper deals with epoxy resin insulators. Surface resistivity is an important property of insulators. Influence of cleaning and regeneration of the insulator surface on surface resistivity are described. Measurement was...

JI - Kompositní materiály

  • 2008
    • •
  • D
Result

*Mechanical load test of Silicone Standoff Post Insulator 1100/7700 c/w ?25-38mm

*Determination of cantilever failing load. Verification of maximum cantilever load of silicone Standoff Post Insulator 1100/7700 c/w ?25-38mm......

JE - Nejaderná energetika, spotřeba a užití energie

  • 2015
    • •
  • Vsouhrn
Result

200 MM BGSOI WAFER

BGSOI (BOND and GRIND back SILICON-ON-INSULATOR) wafer for BCD100 technology. Polished BGSOI wafer with diameter of 200 mm consists from thin device layer (3 um), thin BOX (BURIED OXIDE) layer (700 - 1400 nm) and silicon su...

JJ - Ostatní materiály

  • 2013
    • •
  • Gfunk
Result

200 MM BESOI WAFER

BESOI (BOND and ETCH back SILICON-ON-INSULATOR) wafer for demanding semiconductor technologies. Polished BESOI wafer with diameter of 200 mm consists from thin device layer (2 um), thin BOX (BURIED OXIDE) layer (700 - 1400 nm) and <...

JJ - Ostatní materiály

  • 2013
    • •
  • Gfunk
Result

BGSOI WAFER FOR ULTRA FS IGBT

BGSOI (BOND and GRIND back SILICON-ON-INSULATOR) wafer for Ultra FS IGBT technology. Polished BGSOI wafer with diameter of 150 mm consists from thick device layer (> 100 um), thin BOX (BURIED OXIDE) layer (<200 nm) and silicon

JJ - Ostatní materiály

  • 2013
    • •
  • Gfunk
Result

Flexible mica insulating materials for foundry industry

Development of new range of flexible insulating materials based on mica paper (muscovite or phlogopite), special silicone resin and appropriate carriers. Products have excellent applications properties, electrical strenght and therm...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2005
    • •
  • X
Result

I3T/SOI<110>

Prototype (sample) of advanced Silicon-On-Insulator (SOI) structure based on <110> substrate. SOI wafer diameter 150 mm, thickness 525 or 625 um, crystallographic orientation <110>, BOX 620 nm, device layer thickness 3 um, device la...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2011
    • •
  • Gfunk
Result

HFVR/SOI

Prototype (sample) ? V001/TA01010078 - of advanced Silicon-On-Insulator (SOI) structure for High-Frequency-Voltage-Regulators. SOI wafer diameter 150 mm, substrate heavily doped by Phosphorus (<0.002 ohmcm) thickness 525 um, BOX 620...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2011
    • •
  • Gfunk
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