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Phthalocyanine based field effect-transistors and light-emitting diodes
Field-effect transistors and electroluminiscence diodes based on the phthalocyanine were described...
CF - Fyzikální chemie a teoretická chemie
- 2004 •
- M
Rok uplatnění
M - Uspořádání konference
Organic phthalocyanine films with high mobilities for efficient field-effect transistor switches.
The non-crystalline ordered phthalocyanine films made by vacuum sublimation were used in organic field effect transistors. The spectroscopic method of temperature-modulated field-effect was used for measur...
CD - Makromolekulární chemie
- 2000 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Phthalocyanine based field-effect transistors and light-emitting diodes
Organic thin-film field-effect transistors and light-emitting diodes based on phthalocyanines are fabricated using spin coating, ink-jet printing and vacuum evaporation and their properties are described....
CD - Makromolekulární chemie
- 2004 •
- D
Rok uplatnění
D - Stať ve sborníku
Organic field-effect transistors
Copper-phthalocyanine and water-soluble sodium hydroxyaluminium phthalocyaninedisulfonate based organic field-effect transistors were prepared by vacuum evaporation and spin coating. The values of charge carrier mobilities ...
BG - Jaderná, atomová a molekulová fyzika, urychlovače
- 2004 •
- D
Rok uplatnění
D - Stať ve sborníku
Directly grown nanocrystalline diamond field-effect transistor microstructures
Nanocrystalline diamond microscopic structures (5 ?m width) are grown directly on Si/SiO2 substrates by patterning of a nucleation layer using photolithography prior to the diamond growth. The diamond microstructures exhibit clear transistor...
BM - Fyzika pevných látek a magnetismus
- 2010 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Direct growth of nanocrystalline diamond field-effect transistor microstructures
Nanocrystalline diamond structures are grown by microwave plasma CVD technique on SiO2/Si substrates patterned by polymer. The diamond microstructures exhibit good transistor characteristics....
BM - Fyzika pevných látek a magnetismus
- 2009 •
- O
Rok uplatnění
O - Ostatní výsledky
Graphene Field-Effect Transistor as a Probe of Doping by Adsorbed Oxygen Molecules
Graphene has high potential in chemical sensing, thus understanding adsorption and charge transfer between graphene and adsorbed molecules is essential. We show that graphene field-effect transistor exhibits a moderate sens...
CG - Elektrochemie
- 2016 •
- D
Rok uplatnění
D - Stať ve sborníku
Ion-sensitive field effect transistor on hydrogenated diamond
Ion-sensitive field effect transistors fabricated on intrinsic hydrogen-terminated diamond films exhibit pronounced pH sensitivity (-56 mV/pH). Conductivity of the transistor channel decreases with increasing pH, i...
BM - Fyzika pevných látek a magnetismus
- 2006 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor
We present a study of the magnetoresistance (MR) of a Si metal-oxide-semiconductor field-effect-transistor (MOSFET) at the break-down regime when a magnetic field is applied perpendicular to the plane of the device...
BM - Fyzika pevných látek a magnetismus
- 2010 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Simulation of the Electrical Properties of a Graphene Monolayer Field Effect Transistor
Field-effect graphene transistors are finding increasing commercial and research applications. Simulation is an important step in facilitating this transition. It contributes to understanding the work process, identifying p...
Nano-technology
- 2024 •
- D •
- Link
Rok uplatnění
D - Stať ve sborníku
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