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Ab initio density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces
The atomic and electronic band structures of GaP/Si(001) heterointerfaces were for the abrupt and the lowest-energy heterointerface structures. The distinct features in the heterointerface electronic s...
BM - Fyzika pevných látek a magnetismus
- 2016 •
- Jx •
- Link
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
GaP-on-Si(100) heterointerfaces studied in situ
We give an overview on how we combine optical in situ RAS during industrially scalable growth processes by MOVPE with electron-based in vacuo surface science analytics in order to study the GaP/Si(001) heterointerface formation and its atomi...
BM - Fyzika pevných látek a magnetismus
- 2016 •
- O
Rok uplatnění
O - Ostatní výsledky
Time-resolved in situ spectroscopy during formation of the GaP/Si(100) heterointerface
Though III?V/Si(100) heterointerfaces are essential for future epitaxial high-performance devices, their atomic structure is an open historical question. Benchmarking formation of surfaces and of the heterointerface. A terr...
BM - Fyzika pevných látek a magnetismus
- 2015 •
- Jx •
- Link
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
Identifying Ionic and Electronic Charge Transfer at Oxide Heterointerfaces
heterointerfaces crucially depend on their ionic constitution and defect structure: ionicThe ability to tailor oxide heterointerfaces has led to novel properties in low a thermodynamic balance of ionic and electronic s...
Fluids and plasma physics (including surface physics)
- 2021 •
- Jimp •
- Link
Rok uplatnění
Jimp - Článek v periodiku v databázi Web of Science
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A combined in situ RAS, in vacuo XPS and ab initio DFT study of the GaP/Si(100) heterointerface
We study the preparation and atomi order of the buried GaP/Si(001) heterointerfaces in situ with RAS, XPS, and ab initio DFT. We demonstrate that preparation of almost single domain Si(001) substrate succeeds in suppressing anti-phase disord...
BM - Fyzika pevných látek a magnetismus
- 2016 •
- O
Rok uplatnění
O - Ostatní výsledky
III/V-on-Si interfaces: optical in situ control, surface science and DFT
Pseudomorphic virtual GaP/Si substrates are attractive for III/V-on-Si integration for microelectronics, photovoltaics, and water-splitting. The heterointerface is of particular interest since its atomic and electronic structure hig...
BM - Fyzika pevných látek a magnetismus
- 2016 •
- O
Rok uplatnění
O - Ostatní výsledky
Atomic and electronic structure of GaP/Si(111), GaP/Si(110), and GaP/Si(113) interfaces and superlattices studied by density functional theory
The atomic structure of GaP(111)/Si(111), GaP(110)/Si(110), and GaP(113)/Si(113) heterointerfaces was studied by ab initio calculations employing the density functional theory (DFT). Relative formation energies were computed for the...
BM - Fyzika pevných látek a magnetismus
- 2013 •
- Jx •
- Link
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
GaP-on-Si heterointerfaces and quasisubstrate growth studied in situ during MOVPE
It was demonstrated how time-resolved RAS measurements enable to in situ monitor the GaP nucleation on Si. The GaP sublattice can be inverted by a 'rotation' of the Si dimers prior nucleation or more Ga-rich growth conditions. The impact of As on Si ...
BM - Fyzika pevných látek a magnetismus
- 2016 •
- O
Rok uplatnění
O - Ostatní výsledky
Band bending at heterovalent interfaces: hard X-ray photoelectron spectroscopy of GaP/Si(0 0 1) heterostructures
GaP is a preferred candidate for the transition between Si and heterogeneous III-V epilayers as it is nearly lattice-matched to Si. Here, we scrutinize the atomic structure and electronic properties of GaP/Si(001) heterointerfaces u...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2021 •
- Jimp •
- Link
Rok uplatnění
Jimp - Článek v periodiku v databázi Web of Science
Výsledek na webu
Electroluminescence in a semimetal channel at a single broken-gap heterointerface of type II.
The radiative recombination at the broken-gap p-GaInAsSb/p-InAs type-II interface was investigated in the temperature range of 4-100K.Two electroluminescence bands at 0.37 eV and 0.40 eV were observed. The first EL maximum was ascribed to recombinati...
BM - Fyzika pevných látek a magnetismus
- 2003 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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