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SHIFT OF BAND GAP FROM DIRECT TO INDIRECT AND OPTICAL RESPONSE OF LiF UNDER PRESSURE
We hereby are reporting the transition pressure at which lithium fluoride (LiF) compound transforms from direct band gap to indirect band gap insulator on the basis of FP-LAPW calculations. The fundamental band
BO - Biofyzika
- 2013 •
- Jx •
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Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots
/GaP quantum dots are presented. This system is unique since it exhibits concurrently direct and indirect transitions both in real and momentum space the formulation of k.p calculations for k-indirect transitio...
Optics (including laser optics and quantum optics)
- 2019 •
- Jimp •
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Jimp - Článek v periodiku v databázi Web of Science
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Electronic Band Structure and Optical Properties of HgPS3 Crystal and Layers
to 50 meV above the indirect gap. The optical transition at the Gamma point, it is shown that the HgPS3 crystal has an indirect gap of 2.68 eV at room temperature. Interestingly, in the monolayer regime, ...
Inorganic and nuclear chemistry
- 2024 •
- Jimp •
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Jimp - Článek v periodiku v databázi Web of Science
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Phase transition in BaThO3 from Pbnm to Ibmm turn the fundamental energy band gap from indirect to direct
at high temperature. The transition from the Pbnm to the Ibmm phase cause a change in the band gap (E-g) nature from indirect to direct and a reduction by around 0.3 eV. The calculated E-g is about 4.9 eV (Pbnm) and 4.6 eV...
Materials engineering
- 2019 •
- Jimp •
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Jimp - Článek v periodiku v databázi Web of Science
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Structural and electronic properties of bulk GaP and AlP and their (GaP)(n)/(AlP)(n) superlattices
(GaP,AlP) have indirect bandgaps. The resemblances between GaP and AlP structure and density of state show an indirect band gap superlattices for n = 1 and 2The structural and the electronic properties of...
BO - Biofyzika
- 2011 •
- Jx •
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Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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Effect of vacancy defect and strain on the structural, electronic and magnetic properties of carbon nitride 2D monolayers by DFTB method
at +5% biaxial strain, where a transition from semiconductor to metal was observed. Under +3% biaxial strain, C3N4 undergoes a transition from an indirect (K-Γ) to a direct (Γ-Γ) band gap. Moreover, band gap
Condensed matter physics (including formerly solid state physics, supercond.)
- 2023 •
- Jimp •
- Link
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Jimp - Článek v periodiku v databázi Web of Science
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Experimental and Theoretical Comparative Study of Monolayer and Bulk MoS2 under Compression
of the sample; the transition from a direct to indirect semiconductor state takes place studies. In the case of monolayer MoS2 we observe transitions from direct to indirect band-gap semiconductor and to ...
CG - Elektrochemie
- 2015 •
- D
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D - Stať ve sborníku
Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering
with theoretical calculations, the transition from direct to indirect band gap semiconductor takes place at TILDE OPERATOR+D910.5 GPa, and the transition to a semimetal occurs......
CF - Fyzikální chemie a teoretická chemie
- 2015 •
- Jx •
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Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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Direct Bandgap Silicon: Tensile-Strained Silicon Nanocrystals
Silicon, a semiconductor underpinning the vast majority of microelectronics, is an indirect-gap material and consequently is an inefficient light emitter. This hampers the indirect-gap nature. Here, we propose a so...
BM - Fyzika pevných látek a magnetismus
- 2014 •
- Jx •
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Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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A 'Soft Electronic Band' and the Negative Thermooptic
temperature region. On approaching the band gap edge, the optical absorption shows Urbach tail behavior followed by the onset of indirect optical transitions starting at 3.2 eV and extending up to 3.68 eV; then direct ...
BM - Fyzika pevných látek a magnetismus
- 2009 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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