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Assessment of micromechanical properties of trabecular bone using quantitative backscattered electron microscopy
intratrabecular composition of individual trabeculae was investigated. The quantitative backscattered electron microscopy (qBSE) a method based on detection of electrons backscattered from surfac...
JJ - Ostatní materiály
- 2012 •
- D •
- Link
Rok uplatnění
D - Stať ve sborníku
Výsledek na webu
Detector of backscattered electrons for low energy scanning electron microscopy.
Original scientific paper dealing with Detector of backscattered electrons for low energy scanning electron microscopy....
JA - Elektronika a optoelektronika, elektrotechnika
- 1999 •
- D
Rok uplatnění
D - Stať ve sborníku
Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges
The stacking faults (SFs) in 3C-SiC epitaxially grown on ridges deeply etched into Si(001) substrates offcut towards [110] were quantitatively analyzed by electron microscopy and X-ray diffraction....
BM - Fyzika pevných látek a magnetismus
- 2016 •
- Jx •
- Link
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
Detection of Backscattered Electrons in Low Voltage Scanning Electron Microscopy
This paper deals with the problems of backscattered electrons (BSE) detection in low voltage scanning electron microscopy (LV SEM). The BSE energy is 3 keV and less in LV SEM. This low BSE energy causes problems wi...
JA - Elektronika a optoelektronika, elektrotechnika
- 2005 •
- D
Rok uplatnění
D - Stať ve sborníku
Detection of Backscattered Electrons in Low Voltage Scanning Electron Microscope
This paper deals with detection of backacattered electrons in scanning electron microscope when the accelerating voltage is 5 kV and less. New detection system for low energy backscattered electrons is shown....
JA - Elektronika a optoelektronika, elektrotechnika
- 2004 •
- D
Rok uplatnění
D - Stať ve sborníku
High Resolution Imaging by Means of Backscattered Electrons in the Scanning Electron Microscope
Article deals with the high resolution imaging by means of backscattered electrons (BSE) in the scanning electron microscope. Various systems for the detection of backscattered electrons are outlined. Spec...
JA - Elektronika a optoelektronika, elektrotechnika
- 2007 •
- D
Rok uplatnění
D - Stať ve sborníku
High Resolution Imaging by Means of Backscattered Electrons in the Scanning Electron Microscope
This paper deals with imaging by means of backscattered electrons in the high resolution scanning electron microscopy. Possible backscattered electrons detection and disadvantages are discussed an...
JA - Elektronika a optoelektronika, elektrotechnika
- 2007 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Detectors for the study of contrast mechanisms of backscattered electrons in scanning electron microscopy.
Annotation not available...
JA - Elektronika a optoelektronika, elektrotechnika
- 1995 •
- D
Rok uplatnění
D - Stať ve sborníku
QUANTITATIVE CHARACTERIZATION OF MICROSTRUCTURE OF PURE COPPER PROCESSED BY ECAP
and quantitative characterization of the grain boundary structure in metals based on data from electron backscatter diffraction (EBSD). These methods are applied to samples of copperOrientation imaging microscopy ...
JG - Hutnictví, kovové materiály
- 2013 •
- Jx •
- Link
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
The usage of scanning electron microscopy in industry
The scanning electron microscopy has become an integral part of production and control processes in recent years. Its main function is detection of the causes of secondary electrons (SE), backscattered electron...
Materials engineering
- 2018 •
- Jost
Rok uplatnění
Jost - Ostatní články v recenzovaných periodicích
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