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Transport properties and electronic structure of epitaxial tunnel junctions
Transport properties and electronic structure of epitaxial tunnel junctions...
BM - Fyzika pevných látek a magnetismus
- 2002 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Properties of Tunnel Junctions with Alumina Barrier
Tunnel junction formed of base aluminium electrode, which is oxidized and doped with a substrance under investigation, are used in inelastic electron tunneling spectroscopy (IETS)....
JA - Elektronika a optoelektronika, elektrotechnika
- 2015 •
- D •
- Link
Rok uplatnění
D - Stať ve sborníku
Výsledek na webu
Effects of resonant interface states on tunneling magnetoresistance.
Based on model and ab initio calculations we study the resonant tunneling across epitaxial tunnel junctions.
BM - Fyzika pevných látek a magnetismus
- 2002 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Tunneling junctions under finite bias voltages: Ab initio calculations of electron densities and currents
Tunneling junctions under finite bias voltages: Ab initio calculations of electron densities and currents...
BM - Fyzika pevných látek a magnetismus
- 2004 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Resistance and N onlinearity of Current - Voltage C haracteristic of Conductive Adhesive Joints with Isotropic C onductivity : Tunnel Theory
joint is seen as an aggregate tunnel junction. The theory of conductivity of this junction emerges from the theoretical description of the tunnel phenomenon.: by the constriction resistance and by...
Electrical and electronic engineering
- 2018 •
- Jost •
- Link
Rok uplatnění
Jost - Ostatní články v recenzovaných periodicích
Výsledek na webu
Properties of Tunneling Junctions for Inelastics Electron Tunneling Spectroscopy
Inelastic electron tunneling spectroscopy (IETS) is based on a fact that electron tunneling in metal-insulator-metal junctions can excite the vibrational modes of molecules in or near the insulating barrier region....
JA - Elektronika a optoelektronika, elektrotechnika
- 2003 •
- D
Rok uplatnění
D - Stať ve sborníku
Spin-bottleneck resistance in magnetic-tunnel-junction devices.
Original scientific paper dealing with Spin-bottleneck resistance in magnetic-tunnel-junction devices.
BM - Fyzika pevných látek a magnetismus
- 1998 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Calculated electronic and transport properties of Fe/GaAs/Fe(001) tunnel junctions
The electronic structure and magnetic properties of Fe/GaAs/Fe(001) tunnel junctions have been studied using first-principles calculations. The spin dependent transport properties are found to be sensitive to the interface terminati...
BM - Fyzika pevných látek a magnetismus
- 2004 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Large tunneling anisotropic magneto-Seebeck effect in a CoPt/MgO/Pt tunnel junction
We theoretically investigate the Tunneling Anisotropic Magneto-Seebeck effect in a realistically-modeled CoPt|MgO|Pt tunnel junction using coherent transport calculations....
BM - Fyzika pevných látek a magnetismus
- 2014 •
- Jx •
- Link
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
Optimisation of Ion Beam Etching Process for Fabrication of CoFeB/MgO Magnetic Tunnel Junctions
. We present results on CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions (MTJ) with particular focus on the ion beam etching process of the pillars, which significantly influences the resulting tunnel magnetoresi...
BL - Fyzika plasmatu a výboje v plynech
- 2016 •
- D •
- Link
Rok uplatnění
D - Stať ve sborníku
Výsledek na webu
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