All

What are you looking for?

All
Projects
Results
Organizations

Quick search

  • Projects supported by TA ČR
  • Excellent projects
  • Projects with the highest public support
  • Current projects

Smart search

  • That is how I find a specific +word
  • That is how I leave the -word out of the results
  • “That is how I can find the whole phrase”

Development of e-mode III-nitride devices for energy optimized agile power electronics

Public support

  • Provider

    Ministry of Education, Youth and Sports

  • Programme

    INTER-EXCELLENCE

  • Call for proposals

    SMSM2019LTAIN

  • Main participants

    Fyzikální ústav AV ČR, v. v. i.

  • Contest type

    VS - Public tender

  • Contract ID

    MSMT-2066/2020-15

Alternative language

  • Project name in Czech

    Vývoj nitridových součástek pro energeticky úspornou rychlou výkonovou elektroniku

  • Annotation in Czech

    D1 – návrh heterostruktury pro laterální tranzistory D2 – návrh heterostruktury s vertikální architekturou D3 – návrh geometrie fotolitografických struktur a kontaktů S1a,b – laterální HEMT heterostruktura (dvě verze) a její další zpracování na součástku S2a,b - vertikální heterostruktura (dvě verze) a její další zpracování na součástky

Scientific branches

  • R&D category

    ZV - Basic research

  • OECD FORD - main branch

    21002 - Nano-processes (applications on nano-scale); (biomaterials to be 2.9)

  • OECD FORD - secondary branch

    20501 - Materials engineering

  • OECD FORD - another secondary branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

  • CEP - equivalent branches <br>(according to the <a href="http://www.vyzkum.cz/storage/att/E6EF7938F0E854BAE520AC119FB22E8D/Prevodnik_oboru_Frascati.pdf">converter</a>)

    BM - Solid-state physics and magnetism<br>JG - Metallurgy, metal materials<br>JJ - Other materials<br>JP - Industrial processes and processing

Completed project evaluation

  • Provider evaluation

    U - Uspěl podle zadání (s publikovanými či patentovanými výsledky atd.)

  • Project results evaluation

    GaN HEMT structure with AIGaN back barrier was developed and optimized to protext penetration of current to buffer layers. New technology for GaN preparation was optimized and suggested with special design of AIGaN/GaN interface morphology for increasing electron mobility. We have experimentally proved that dislocation density suppression leads to increased electron mobility in 2DEG.

Solution timeline

  • Realization period - beginning

    Jan 1, 2020

  • Realization period - end

    Dec 31, 2022

  • Project status

    U - Finished project

  • Latest support payment

    Mar 1, 2022

Data delivery to CEP

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

  • Data delivery code

    CEP23-MSM-LT-U

  • Data delivery date

    Jun 30, 2023

Finance

  • Total approved costs

    4,084 thou. CZK

  • Public financial support

    4,084 thou. CZK

  • Other public sources

    0 thou. CZK

  • Non public and foreign sources

    0 thou. CZK