Anomalous luminescence temperature dependence of (In,Ga)(As,Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00177016%3A_____%2F23%3AN0000104" target="_blank" >RIV/00177016:_____/23:N0000104 - isvavai.cz</a>

Alternative codes found

RIV/00216224:14310/23:00132512

Result on the web

<a href="https://iopscience.iop.org/article/10.1088/1367-2630/ad0856" target="_blank" >https://iopscience.iop.org/article/10.1088/1367-2630/ad0856</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1367-2630/ad0856" target="_blank" >10.1088/1367-2630/ad0856</a>

Result language

angličtina

Original language name

Anomalous luminescence temperature dependence of (In,Ga)(As,Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications

Original language description

We study (In,Ga)(As,Sb)/GaAs quantum dots (QDs) embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. QD samples are studied by temperature-dependent photoluminescence, and we observe that the QD emission shows anomalous temperature dependence, i.e. increase of energy with temperature increase from 10 K to ∼70 K, followed by energy decrease for larger temperatures. With the help of fitting of luminescence spectra by Gaussian bands with energies extracted from eight band theory with multiparticle corrections calculated using the configuration interaction method, we explain the anomalous temperature dependence as mixing of momentum direct and indirect exciton states. We also find that the k-indirect electron–hole transition in type-I regime at temperatures  K is optically more intense than k-direct. Furthermore, we identify a band alignment change from type-I to type-II for QDs overgrown by more than one monolayer of GaSb. Finally, we predict the retention time of (In,Ga)(As,Sb)/GaAs/AlP/GaP QDs capped with GaSb layers with varying thickness, for usage as storage units in the QD-Flash nanomemory concept and observe that by using only a 2 ML-thick GaSb capping layer, the projected storage time surpasses the non-volatility limit of ten years.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10306 - Optics (including laser optics and quantum optics)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2023

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

New Journal of Physics

ISSN

1367-2630

e-ISSN

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Volume of the periodical

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Issue of the periodical within the volume

25

Country of publishing house

GB - UNITED KINGDOM

Number of pages

17

Pages from-to

113012-113028

UT code for WoS article

999

EID of the result in the Scopus database

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