Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00474047" target="_blank" >RIV/68378271:_____/17:00474047 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2016.11.110" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2016.11.110</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2016.11.110" target="_blank" >10.1016/j.jcrysgro.2016.11.110</a>

Result language
angličtina
Original language name
Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications
Original language description
InAs/GaAs QD HS with different covering layers (CLs) prepared by MOVPE are compared. The recombination energy of a structure covered only by GaAs depends nonlinearly on CL thickness. Experimental data of PL were supported by theoretical simulations. These simulations prove that the strain plays a major role. Due to the strain reduction, the recombination energy is decreased, so the structure has longer PL wavelength. By theoretical simulations it was shown that for high content of In in InGaAs covering layer (45% and more), the heterostructure is type II, which would normally be unreachable for flat layers. For the structure with GaAsSb SRL, the band alignment is highly dependent on the SRL composition. The type I/type II transition occurs for approximately 15% of Sb, this value also slightly depends on the QD size. All structures were also studied by HRTEM to show different behavior of the CLs on the interface with InAs which highly influences the structure quality.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
<a href="/en/project/LO1603" target="_blank" >LO1603: Centre of Technology and Advanced Structure Analysis of Materials with Application Impact</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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