GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00474050" target="_blank" >RIV/68378271:_____/17:00474050 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2016.11.080" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2016.11.080</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2016.11.080" target="_blank" >10.1016/j.jcrysgro.2016.11.080</a>

Result language

angličtina

Original language name

GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications

Original language description

We focused on design of suitable underlying and covering layers of InAs/GaAs quantum dots (QDs) with the aim to increase the carrier extraction rate in the QD solar cell structures. Covering QDs by a GaAsSb strain reducing layer (SRL) with type II band alignment significantly improves photogenerated carrier extraction from InAs QDs. An additional thin InGaAs SRL below InAs QDs further enhances the extraction of photogenerated carriers. Properties of QD structures without any SRL, with GaAsSb covering SRL, and with combination of thin below-QDs InGaAs and GaAsSb covering SRLs are compared and the mechanism of carrier extraction is discussed. We showed that thin below-QDs InGaAs SRL together with increasing profile of antimony concentration in covering GaAsSb SRL can significantly improve the resulting properties of solar cell structures with InAs QDs.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

—

Volume of the periodical

464

Issue of the periodical within the volume

Apr

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

5

Pages from-to

64-68

UT code for WoS article

000398873500012

EID of the result in the Scopus database

2-s2.0-85015369236