GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00484348" target="_blank" >RIV/68378271:_____/17:00484348 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1088/2053-1591/aa598e" target="_blank" >http://dx.doi.org/10.1088/2053-1591/aa598e</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/2053-1591/aa598e" target="_blank" >10.1088/2053-1591/aa598e</a>

Result language

angličtina

Original language name

GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD

Original language description

Type-II band alignment offers several advantages for proposed intermediate band solar cell structures. We focused on the quantum dot (QD) solar cell structures based on type-II InAs/GaAs QD layers capped with GaAsSb strain reducing layers. The GaAsSb strain reducing layers were prepared with or without graded Sb concentration. Strong enhancement of photocurrent was achieved by adding an InGaAs buffer layer under the type-II QD structure, thanks to improved electron extraction from QDs. For comparison, a structure with GaAs-capped InAs QDs was prepared, too. Properties of all structures are compared and the mechanism of carrier extraction or relaxation is discussed. Gradient of antimony concentration in a strain reducing layer (SRL) significantly improved resulting properties of solar cell structures. It is shown that in a multiple-QD structure with a GaAsSb SRL, electrons and holes have non-intersecting trajectories which prevents carrier recombination and improves the efficiency of solar cell structures. NextNano band structure calculations of different types of structures support our experimental results.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Materials Research Express

ISSN

2053-1591

e-ISSN

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Volume of the periodical

4

Issue of the periodical within the volume

2

Country of publishing house

GB - UNITED KINGDOM

Number of pages

8

Pages from-to

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UT code for WoS article

000415123000002

EID of the result in the Scopus database

2-s2.0-85014381997