GaAsSb strain reducing layers for InAs/GaAs quantum dot long wavelength and high efficiency emission

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00367155" target="_blank" >RIV/68378271:_____/11:00367155 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

GaAsSb strain reducing layers for InAs/GaAs quantum dot long wavelength and high efficiency emission

Original language description

In this work we report the photoluminescence (PL) at maximum wavelength 1391 nm on MOVPE prepared InAs/GaAs quantum dots (QDs) with GaAsSb strain reducing layer (SRL) maintaining the type I heterojunction between QDs and GaAsSb SRL. We present the shiftof PL maximum towards longer wavelengths with increasing Sb content in SRL. This type of structure increases strongly PL efficiency, redshifts the PL peak, decreases its full width at half maximum and maintains a similar energy separation between the ground state and excited state in comparison to QDs covered only by GaAs. These properties are promising for the use of GaAsSb SRL in QD devices.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2011

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

EWMOVPE XIV

ISBN

978-83-7493-599-9

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

105-108

Publisher name

Printing house of Wroclaw University of Technology

Place of publication

Wroclaw

Event location

Wrocław

Event date

Jun 5, 2011

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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