Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00458379" target="_blank" >RIV/68378271:_____/16:00458379 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.physb.2015.09.002" target="_blank" >http://dx.doi.org/10.1016/j.physb.2015.09.002</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.physb.2015.09.002" target="_blank" >10.1016/j.physb.2015.09.002</a>

Result language
angličtina
Original language name
Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures
Original language description
This review paper summarizes some of results achieved during last years of our quantum dot (QD) research. We show that the QD shape significantly influence the QD photoluminescence (PL) spectrum. Magneto-PL can be used for determination of the anisotropy of QDs. The main goal was to redshift QD PL emission towards telecommunication wavelengths of MOVPE prepared InAs/GaAs QDs using InGaAs or GaAsSb covering strain reducing layer (SRL). We have experimentally demonstrated that the type I/type II transition of GaAsSb covered InAs QD does not depend only on the composition of the SRL, but also on other structure parameters, like QD size or intensity of electric field.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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