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Radiation measurements using Timepix3 with silicon sensor and bare chip in proton beams for FLASH radiotherapy

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00177016%3A_____%2F25%3AN0000098" target="_blank" >RIV/00177016:_____/25:N0000098 - isvavai.cz</a>

  • Result on the web

    <a href="https://doi.org/10.1088/1748-0221/20/04/C04030" target="_blank" >https://doi.org/10.1088/1748-0221/20/04/C04030</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1088/1748-0221/20/04/C04030" target="_blank" >10.1088/1748-0221/20/04/C04030</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Radiation measurements using Timepix3 with silicon sensor and bare chip in proton beams for FLASH radiotherapy

  • Original language description

    This study investigates the response of Timepix3 semiconductor pixel detectors in proton beams of varying intensities, with a focus on FLASH proton therapy. Using the Timepix3 application-specific integrated circuit (ASIC) chip, we measured the spatial and spectral characteristics of 220 MeV proton beams delivered in short pulses. The experimental setup involved Minipix readout electronics integrated with a Timepix3 chipboard in a flexible architecture, and an Advapix Timepix3 with a silicon sensor. Measurements were carried out with Timepix3 detectors equipped with experimental gallium arsenide (GaAs) and silicon (Si) sensors. We also investigated the response of a bare Timepix3 ASIC chip (without sensor). The detectors were placed within a waterproof holder attached to the positioning system of the IBA Blue water phantom, with additional measurements performed in air behind a 2 cm-thick polymethyl methacrylate (PMMA) phantom. The results demonstrated the capability of the Timepix3 detectors to measure time-over-threshold (ToT, deposited energy) and event counts (number of events in a pixel) in both conventional and ultra-high-dose-rates (UHDR) proton beams. The bare ASIC chip configuration sustained up to a dose rate (DR) of 270 Gy/s, the maximum tested intensity, although it exhibited limited spatial resolution due to low detection efficiency. In contrast, Minipix Timepix3 with experimental GaAs sensors showed saturation at low DR∼5 Gy/s. Furthermore, the Advapix Timepix3 detector was used in both standard and customized configurations. In the standard configuration (Ikrum = 5), the detector showed saturation at DR∼5 Gy/s. But, in the customized configuration when the per-pixel discharging signal (called “Ikrum”) was increased (Ikrum = 80), the detector demonstrated enhanced performance by reducing the duration of the ToT signal, allowing beam spot imaging up to DR=∼28 Gy/s in the plateau region of the Bragg curve. For such DR or higher, the frame acquisition time was reduced to the order of microseconds, meaning only a fraction of the pulse (with pulse lengths on the order of milliseconds) was captured.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10303 - Particles and field physics

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2025

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Instrumentation

  • ISSN

  • e-ISSN

    1748-0221

  • Volume of the periodical

    20

  • Issue of the periodical within the volume

    4

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    10

  • Pages from-to

  • UT code for WoS article

    001472034600001

  • EID of the result in the Scopus database