Study of PIN diode energy traps created by neutrons

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11110%2F13%3A10191311" target="_blank" >RIV/00216208:11110/13:10191311 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21220/13:00214490 RIV/68407700:21670/13:00214490
Result on the web
<a href="http://dx.doi.org/10.1088/1748-0221/8/03/C03014" target="_blank" >http://dx.doi.org/10.1088/1748-0221/8/03/C03014</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1748-0221/8/03/C03014" target="_blank" >10.1088/1748-0221/8/03/C03014</a>

Result language
angličtina
Original language name
Study of PIN diode energy traps created by neutrons
Original language description
Characterization of radiation defects is still ongoing and finds greater application in the increasing radiation doses on semiconductor detectors in experiments. Studying the changes of silicon PIN diode for high doses of radiation is the fundamental motivation for our measurements. In this article we describe the behavior of the PIN diode and development of the disorder caused by neutrons from a 252Cf and doses up to 8 Gy. The calibration curve for PIN diode shows the effect of disorders as the changesof the voltampere characteristics depending on the dose of neutron irradiation. The measured values for defects are in good agreement with created energy traps.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BO - Biophysics
OECD FORD branch
—

Project
<a href="/en/project/LA08032" target="_blank" >LA08032: International experiment ATLAS-CERN</a><br>
Continuities
V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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