Study of PIN Diode Energy Traps Created by Neutrons

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F12%3A00200920" target="_blank" >RIV/68407700:21220/12:00200920 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21670/12:00200920
Result on the web
<a href="http://iworid2012.fis.uc.pt/" target="_blank" >http://iworid2012.fis.uc.pt/</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Study of PIN Diode Energy Traps Created by Neutrons
Original language description
Characterization of radiation defects is still ongoing and finds greater application in the increasing radiation doses on semiconductor detectors in experiments. Studying the changes of silicon PIN diode for high doses of radiation is the fundamental motivation for our measurements. In this article we describe the behavior of the PIN diode and development of the disorder caused by neutrons from a 252Cf and doses up to 8 Gy. The calibration curve for PIN diode shows the effect of disorders as the changesof the voltampere characteristics depending on the dose of neutron irradiation. The measured values for defects are in good agreement with created energy traps. The results are compared with similar already published data obtained within RD50 collaboration.
Czech name
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Czech description
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Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society and 2012 6th IEEE International Conference on E-Learning in Industrial Electronics (ICELIE)
ISBN
978-1-4673-2420-5
ISSN
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e-ISSN
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Number of pages
1
Pages from-to
165
Publisher name
IEEE
Place of publication
Montreal
Event location
Montreal
Event date
Oct 25, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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