Hydrogenation Induced Carrier Mobility Polarity Reversal in Monolayer AlN

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11310%2F17%3A10372893" target="_blank" >RIV/00216208:11310/17:10372893 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/pssr.201700260" target="_blank" >http://dx.doi.org/10.1002/pssr.201700260</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssr.201700260" target="_blank" >10.1002/pssr.201700260</a>

Result language
angličtina
Original language name
Hydrogenation Induced Carrier Mobility Polarity Reversal in Monolayer AlN
Original language description
Two-dimensional (2D) materials promote the development of nanoelectronic devices, which requires candidate systems with both a high carrier mobility and a moderate electronic bandgap. We present a first principles calculation of the intrinsic carrier mobilities of pristine (1L-AlN) and hydrogenated (1L-AlN-H-2) monolayer AlN. Numerical results reveal that 1L-AlN shows a hole-dominated ultra-large carrier mobility (up to 5277cm(2)V(-1)s(-1)). Upon full hydrogenation (1L-AlN-H-2), the polarity of carrier mobility is reversed from hole dominated to electron dominated. This tunable polarity of intrinsic carrier mobility indicates monolayer AlN as a promising candidate for future nanoelectronics.
Czech name
—
Czech description
—

Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10403 - Physical chemistry

Project
—
Continuities
S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)