Evaluation of the Concentration of Deep Levels in Semi-Insulating CdTe by Photoconductivity and TEES

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F09%3A00206329" target="_blank" >RIV/00216208:11320/09:00206329 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Evaluation of the Concentration of Deep Levels in Semi-Insulating CdTe by Photoconductivity and TEES

Original language description

The concentrations of near-midgap levels in high-resistivity CdTe were estimated based on a combined evaluation of room temperature lux-ampere characteristics and thermoelectric effect spectroscopy measurements (77-400 K). A simulation of experimental data was performed by a numerical solution of drift diffusion and Poisson equations using a model with two deep levels.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/GA102%2F06%2F0258" target="_blank" >GA102/06/0258: High quality semiinsulating CdTe for gamma ray detectors</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

IEEE Transactions on Nuclear Science

ISSN

0018-9499

e-ISSN

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Volume of the periodical

56

Issue of the periodical within the volume

4

Country of publishing house

US - UNITED STATES

Number of pages

6

Pages from-to

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UT code for WoS article

000269154800002

EID of the result in the Scopus database

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