Si islands with 1x1 termination formed by desorption of Tl from Si(111) surface
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F09%3A00206768" target="_blank" >RIV/00216208:11320/09:00206768 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Si islands with 1x1 termination formed by desorption of Tl from Si(111) surface
Original language description
Si islands with 1x1 termination on the Si(111) surface prepared by desporption of Tl is reported. Structure of the islands is interpreted as the dimer-stacking-fault model. Stabilization by subsurface dimers is proposed.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Surface Science
ISSN
0169-4332
e-ISSN
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Volume of the periodical
256
Issue of the periodical within the volume
4
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
3
Pages from-to
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UT code for WoS article
000272342300060
EID of the result in the Scopus database
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