In-situ doping and implantation of GaN layers with Mn

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F09%3A10084015" target="_blank" >RIV/00216208:11320/09:10084015 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

In-situ doping and implantation of GaN layers with Mn

Original language description

In this paper we present a growth of Ga(1-x)Mn(x)N layers by Metal-Organic Vapor Phase Epitaxy(MOVPE) and ion implantation of GaN layers with Mn. This material is a promising candidate for spintronic applications. The layers were prepared on (0001) sapphire substrates. Optimum parameters of preparations by MOVPE method were investigated and the prepared samples were tested for magnetic properties. The samples were characterized by Secondary Ion Mass Spectrometry(SIMS), Electron Microprobe and Particle Induce X-ray Emission (PIXE) methods, and by Raman spectroscopy. The magnetic parameters were investigated using the Superconducting Quantum Interference Device(SQUID)

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physica Status Solidi. C. Solid State Physics

ISSN

1862-6351

e-ISSN

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Volume of the periodical

6

Issue of the periodical within the volume

S2

Country of publishing house

US - UNITED STATES

Number of pages

4

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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