In-situ doping and Implantation of GaN layers with Mn

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F09%3A00021621" target="_blank" >RIV/60461373:22310/09:00021621 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

In-situ doping and Implantation of GaN layers with Mn

Original language description

We present a growth of Ga1-xMnxN layers by MOVPE and ion implantation of GaN layers with Mn. The achieved Mn concentration was well below the solubility limit, ranging from 0.2 to 1.1 at.%. Implanted doses of Mn ions were in the range 1x1016 ? 5x1016 Mnatoms.cm-2 with energy of 330 keV. In both in-situ grown and implanted samples, a ferromagnetic component persisting up to room temperature and a prevailing paramagnetic phase were observed. The ferromagnetic moment observed in implanted samples was influenced by free carrier concentration in GaN layers which were used for implantation.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

CA - Inorganic chemistry

OECD FORD branch

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Project

<a href="/en/project/GA104%2F06%2F0642" target="_blank" >GA104/06/0642: Thin Films of Magnetically Doped A(iii)N Semiconductors for Spin Electronics Applications</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physica Status Solidi (c)

ISSN

1610-1634

e-ISSN

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Volume of the periodical

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Issue of the periodical within the volume

S2

Country of publishing house

DE - GERMANY

Number of pages

5

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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