Hydrogen-induced defects in Pd films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F09%3A10084075" target="_blank" >RIV/00216208:11320/09:10084075 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Hydrogen-induced defects in Pd films

Original language description

Hydrogen absorbed in crystalline solids causes a lattice expansion and the formation of hydride phases. Contrary to free standing bulk samples, thin films are fixed at substrates, which prevent their in-plane expansion. This makes hydrogen- induced expansion of thin films highly anisotropic and leads to the formation of high stresses in hydrogen loaded thin films. As a consequence, lattice defects may be created in thin films loaded with hydrogen. This work reports about defects created by hydrogen loading in epitaxial Pd films deposited on Al2O3 substrates by cold cathode beam sputtering. Hydrogen-induced defects are characterized by positron annihilation spectroscopy performed with variable energy slow positron beams.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physica Status Solidi. C. Solid State Physics

ISSN

1610-1634

e-ISSN

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Volume of the periodical

6

Issue of the periodical within the volume

11

Country of publishing house

DE - GERMANY

Number of pages

3

Pages from-to

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UT code for WoS article

000279544900030

EID of the result in the Scopus database

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