Structural studies of nanocrystalline thin Pd films electrochemically doped with hydrogen

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10129210" target="_blank" >RIV/00216208:11320/12:10129210 - isvavai.cz</a>

Result on the web

<a href="http://www.scientific.net/DDF.331.137" target="_blank" >http://www.scientific.net/DDF.331.137</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.4028/www.scientific.net/DDF.331.137" target="_blank" >10.4028/www.scientific.net/DDF.331.137</a>

Result language

angličtina

Original language name

Structural studies of nanocrystalline thin Pd films electrochemically doped with hydrogen

Original language description

Hydrogen absorption in Pd causes a significant volume expansion. In free-standing bulk Pd, the hydrogen-induced volume expansion is isotropic. However, the situation becomes more complicated in thin Pd films. Contrary to bulk samples, thin films are clamped to an elastically stiff substrate, which prevents in-plane expansion. Hence, the volume expansion of a thin film is strongly anisotropic because it expands in the out-of-plane direction only. Internal stresses introduced by absorbed hydrogen may become so high that detachment of a film from the substrate is energetically favorable and buckles of various morphologies are formed. In the present work, we studied hydrogen-induced buckling in a nanocrystalline thin Pd film deposited on a sapphire substrate. Slow positron implantation spectroscopy (SPIS) was employed as a principal tool for the characterization of defects and investigation of defect interactions with hydrogen. SPIS studies were combined with X-ray diffraction and direct o

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Defect and Diffusion Forum

ISSN

1012-0386

e-ISSN

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Volume of the periodical

331

Issue of the periodical within the volume

19.09.2012

Country of publishing house

CH - SWITZERLAND

Number of pages

11

Pages from-to

137-147

UT code for WoS article

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EID of the result in the Scopus database

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