Electric field distributions in CdZnTe due to reduced temperature and x-ray irradiation

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F10%3A10057807" target="_blank" >RIV/00216208:11320/10:10057807 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Electric field distributions in CdZnTe due to reduced temperature and x-ray irradiation

Original language description

Real-time Pockels imaging is performed on semi-insulating CdZnTe to measure the electric field profile in the material bulk. In steady-state room temperature conditions the measured electric field profile is uniform, consistent with a low space charge concentration. At temperatures 270 K a significant nonuniform electric field profile is observed, which we explain in terms of temperature-induced band bending at the metal-semiconductor interface, causing the formation of positive space charge in the bulk. Similar electric field distortion effects are observed when room temperature CdZnTe is irradiated by x-rays, causing a high rate of photoinduced charge injection.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Applied Physics Letters

ISSN

0003-6951

e-ISSN

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Volume of the periodical

2010

Issue of the periodical within the volume

13

Country of publishing house

US - UNITED STATES

Number of pages

3

Pages from-to

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UT code for WoS article

000276275300077

EID of the result in the Scopus database

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