Scanning tunneling microscopy contrast in lateral Ge-Si nanostructures on Si(111)-sqrt(3)xsqrt(3)-Bi
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F10%3A10070069" target="_blank" >RIV/00216208:11320/10:10070069 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Scanning tunneling microscopy contrast in lateral Ge-Si nanostructures on Si(111)-sqrt(3)xsqrt(3)-Bi
Original language description
We investigate the origin of scanning tunneling microscope (STM) contrast in lateral Ge-Si nanostructures prepared on the Si(111)-V3xV3-Bi surface [Phys. Rev. Lett. 91, 096102 (2003)]. At low sample bias, the voltage-dependent apparent height differencebetween Si- and Ge-terminated areas in STM images corresponds exceptionally well to the difference in voltage integrated scanning tunneling spectroscopy (STS) curves measured in Si- and Ge-terminated areas. The STS curves and the STM contrast reflect both differences in local density of states and in tip-induced effects in Si and Ge-terminated areas. At higher bias voltage, the tunneling into unoccupied states on Ge-terminated areas is strongly influenced by lowering of the local height of the tunnelingbarrier with respect to Si. The lowering of the local tunneling barrier height vanishes for the occupied states and can be traced back to different tip-induced band bending on Si- and Ge-terminated areas.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physical Review B - Condensed Matter and Materials Physics
ISSN
1098-0121
e-ISSN
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Volume of the periodical
81
Issue of the periodical within the volume
24
Country of publishing house
US - UNITED STATES
Number of pages
10
Pages from-to
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UT code for WoS article
000279145200001
EID of the result in the Scopus database
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