Growth of thin epitaxial alumina films onto Ni(111): an electron spectroscopy and diffraction study

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F10%3A10071368" target="_blank" >RIV/00216208:11320/10:10071368 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Growth of thin epitaxial alumina films onto Ni(111): an electron spectroscopy and diffraction study

Original language description

An epitaxial ultra-thin alumina layer was prepared on Ni(111) by simultaneous Al deposition and oxidation at elevated temperatures. Different deposition procedures lead to creation of oxide layers of various thicknesses and quality. Low-energy electron diffraction revealed epitaxial parameters of the films and the relationship between the nickel substrate and the oxide overlayer. Core-level photoelectron spectroscopy using Al-K-alpha and synchrotron-generated photons show that the oxide-metal interfaceis formed by oxygen atoms, which is contrary to the case of epitaxial alumina layers prepared by the oxidation of NiAl(110) and Ni3Al(111) surfaces. The results of a photoelectric work function measurement are also discussed.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Surface and Interface Analysis

ISSN

0142-2421

e-ISSN

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Volume of the periodical

42

Issue of the periodical within the volume

10-11

Country of publishing house

US - UNITED STATES

Number of pages

4

Pages from-to

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UT code for WoS article

000282668800016

EID of the result in the Scopus database

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