X-ray characterization of semiconductor nanostructures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10103797" target="_blank" >RIV/00216208:11320/11:10103797 - isvavai.cz</a>
Result on the web
<a href="http://iopscience.iop.org/0268-1242/26/6/064002" target="_blank" >http://iopscience.iop.org/0268-1242/26/6/064002</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/0268-1242/26/6/064002" target="_blank" >10.1088/0268-1242/26/6/064002</a>
Alternative languages
Result language
angličtina
Original language name
X-ray characterization of semiconductor nanostructures
Original language description
Theoretical description of x-ray scattering from nanostructures is briefly summarized. The application of x-ray scattering for the investigation of the structure of nanocrystals is demonstrated by two characteristic examples comprising standard small-angle x-ray scattering from nanocrystals in an amorphous matrix and x-ray diffraction from crystalline inclusions in an epitaxial layer. New synchrotron-based x-ray scattering methods are briefly discussed.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Semiconductor Science and Technology
ISSN
0268-1242
e-ISSN
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Volume of the periodical
26
Issue of the periodical within the volume
6
Country of publishing house
GB - UNITED KINGDOM
Number of pages
7
Pages from-to
1-7
UT code for WoS article
000289279300003
EID of the result in the Scopus database
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