In situ growth of epitaxial cerium tungstate (100) thin films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10108247" target="_blank" >RIV/00216208:11320/11:10108247 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1039/C0CP03012K" target="_blank" >http://dx.doi.org/10.1039/C0CP03012K</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1039/C0CP03012K" target="_blank" >10.1039/C0CP03012K</a>

Result language
angličtina
Original language name
In situ growth of epitaxial cerium tungstate (100) thin films
Original language description
The deposition of ceria on a preoxidized W(110) crystal at 870 K has been studied in situ by photoelectron spectroscopy and low-energy electron diffraction. Formation of an epitaxial layer of crystalline cerium tungstate Ce(6)WO(12)(100), with the metalsin the Ce(3+) and W(6+) chemical states, has been observed. The interface between the tungsten substrate and the tungstate film consists of WO suboxide. At thicknesses above 0.89 nm, cerium dioxide grows on the surface of Ce(6)WO(12), favoured by the limited diffusion of tungsten from the substrate.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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