Growth of cerium tungstate epitaxial layers: influence of temperature

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F16%3A10334062" target="_blank" >RIV/00216208:11320/16:10334062 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=4PBYytjAGF" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=4PBYytjAGF</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/sia.5916" target="_blank" >10.1002/sia.5916</a>

Result language
angličtina
Original language name
Growth of cerium tungstate epitaxial layers: influence of temperature
Original language description
Thin films of cerium tungstate prepared in situ by cerium deposition in oxygen atmosphere onto the W(100) single-crystal were investigated by means of photoelectron spectroscopy and low-energy electron diffraction (LEED). The studied temperature range was 173-1073 K. It was found that the temperature necessary for the oriented growth of Ce6WO12(100) was 673 K, and at higher temperatures, the LEED pattern improved. Photoemission data revealed the partial formation of CeO2 on the surface at preparation temperatures below 473 K due to limited diffusion of tungsten atoms from the substrate.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10305 - Fluids and plasma physics (including surface physics)

Project
<a href="/en/project/LM2015057" target="_blank" >LM2015057: Surface Physics Laboratory – Materials Science Beamline</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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