Nanometer-Range Strain Distribution in Layered Incommensurate Systems

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10131343" target="_blank" >RIV/00216208:11320/12:10131343 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1103/PhysRevLett.109.266102" target="_blank" >http://dx.doi.org/10.1103/PhysRevLett.109.266102</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevLett.109.266102" target="_blank" >10.1103/PhysRevLett.109.266102</a>

Result language
angličtina
Original language name
Nanometer-Range Strain Distribution in Layered Incommensurate Systems
Original language description
We adopt fringe counting from classical moire interferometry on moire patterns observed in scanning tunneling microscopy of strained thin films on single crystalline substrates. We analyze inhomogeneous strain distribution in islands of CeO2(111) on Cu(111) and identify a generic source of strain in heteroepitaxy-a thickness-dependent lattice constant of the growing film. This observation is mediated by the ability of ceria to glide on the Cu substrate. The moire technique we are describing has a potential of nanometer-scale resolution of inhomogeneous two dimensional strain in incommensurate layered systems, notably in supported graphene.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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