The misfit dislocation density profile in graded SiGe/Si(001) layers prepared at different temperatures

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10139997" target="_blank" >RIV/00216208:11320/13:10139997 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/0953-8984/25/17/175802" target="_blank" >http://dx.doi.org/10.1088/0953-8984/25/17/175802</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/0953-8984/25/17/175802" target="_blank" >10.1088/0953-8984/25/17/175802</a>

Result language
angličtina
Original language name
The misfit dislocation density profile in graded SiGe/Si(001) layers prepared at different temperatures
Original language description
We present a generalization of the Dodson-Tsao kinematic model of misfit dislocation for graded SixGe1-x/Si(001) layers. The layers were prepared under different growing conditions (temperature). The misfit dislocation distribution has been determined bymeans of high-resolution x-ray scattering. Analysis of the reciprocal space maps was compared with the kinematic Dodson-Tsao model and the equilibrium Tersoff model.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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