Lattice strain of hydrogen-implanted silicon: Correlation between X-ray scattering analysis and ab-initio simulations

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10140012" target="_blank" >RIV/00216208:11320/13:10140012 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1063/1.4800538" target="_blank" >http://dx.doi.org/10.1063/1.4800538</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4800538" target="_blank" >10.1063/1.4800538</a>

Result language

angličtina

Original language name

Lattice strain of hydrogen-implanted silicon: Correlation between X-ray scattering analysis and ab-initio simulations

Original language description

Hydrogen implanted silicon has been studied using high resolution X-ray scattering. Strain induced by implantation has been measured as a function of implantation dose. The dependence of strain with implanted dose shows different regimes starting from linear to quadratic and saturation. The observed strain is consistent with ab-initio and elasticity calculations. Strain rate changes can be associated to the predominant location of hydrogen in bond center location. (C) 2013 AIP Publishing LLC

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2013

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

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Volume of the periodical

113

Issue of the periodical within the volume

15

Country of publishing house

US - UNITED STATES

Number of pages

4

Pages from-to

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UT code for WoS article

000318251400017

EID of the result in the Scopus database

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