Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10140045" target="_blank" >RIV/00216208:11320/13:10140045 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2012.11.041" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2012.11.041</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2012.11.041" target="_blank" >10.1016/j.jcrysgro.2012.11.041</a>

Result language
angličtina
Original language name
Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors
Original language description
Post-growth annealing is a potentially promising method of improving the properties of CZT for fabricating room-temperature X-ray and gamma-ray detectors. In this paper, we summarize some of our recent research on annealing detector-grade CZT crystals. Our results show that annealing in a Cd vapor effectively removes Te inclusions from CZT. The migration of Te inclusions was also observed for annealing in a temperature-gradient field. We recorded a loss of resistivity of the detector-grade CZT after annealing in a Cd vapor. The underlying mechanism of this loss was discussed, and solutions including two-step annealing (Cd annealing followed by Te annealing) and one-step annealing with Cd and Zn pressure control were proposed to maintain high resistivity.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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