Effect of Cd(0.9)Zn(0.1)Te:In Crystals Annealing on Their High-Temperature Electrical Properties
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10105613" target="_blank" >RIV/00216208:11320/11:10105613 - isvavai.cz</a>
Result on the web
<a href="http://ieeexplore.ieee.org/xpl/tocresult.jsp?asf_arn=null&asf_iid=0&asf_pun=23&asf_in=5&asf_rpp=null&asf_iv=58&asf_sp=2346&asf_pn=1" target="_blank" >http://ieeexplore.ieee.org/xpl/tocresult.jsp?asf_arn=null&asf_iid=0&asf_pun=23&asf_in=5&asf_rpp=null&asf_iv=58&asf_sp=2346&asf_pn=1</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/TNS.2011.2164580" target="_blank" >10.1109/TNS.2011.2164580</a>
Alternative languages
Result language
angličtina
Original language name
Effect of Cd(0.9)Zn(0.1)Te:In Crystals Annealing on Their High-Temperature Electrical Properties
Original language description
We studied the electrical properties of Cd(0.9)Zn(0.1)Te:In (CZT) single crystals with [In]=3*10(15) at/cm(3) at its high-temperature point-defect equilibrium state under a Cd overpressure. We detailed the influence of thermal treatment and the deviationof stoichiometry on the electron concentration, observing unexpectedly high conductivity and an increase in free-electron density (similar to 1.5-2 orders of magnitude) when annealing the sample at 770 K under a Cd vapor pressure (0.01 atm.). Prolongedexposure of the samples under these conditions lowered the electron density by two approximately orders-of-magnitude until it approached the intrinsic value. The electron mobility after such treatment increased to CZT maximal values at similar to 460 K (650-700 cm(2)/(V*s)). Therefore, such annealing can be effective in assuring high-resistive CZT detectors after crystal growth, or by special treatment, thereby eliminating the inclusions. We analyzed these data in the framework of Kroger
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
IEEE Transactions on Nuclear Science
ISSN
0018-9499
e-ISSN
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Volume of the periodical
58
Issue of the periodical within the volume
5
Country of publishing house
US - UNITED STATES
Number of pages
6
Pages from-to
2346-2351
UT code for WoS article
000295778000005
EID of the result in the Scopus database
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