Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10125916" target="_blank" >RIV/00216208:11320/12:10125916 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/1748-0221/7/11/C11001" target="_blank" >http://dx.doi.org/10.1088/1748-0221/7/11/C11001</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1748-0221/7/11/C11001" target="_blank" >10.1088/1748-0221/7/11/C11001</a>
Alternative languages
Result language
angličtina
Original language name
Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing
Original language description
We present in this contribution results of two-step annealing, when the CdTe:Cl doped samples are at first annealed under Cd overpressure to remove inclusions and the re-annealed under Te overpressure to restore the high resistivity state. Investigationof samples after Cd rich annealing by infrared microscope has proven, that all inclusions are removed. Also Te nano precipitates were strongly influenced by the annealing process. The resistivity of the samples after Te-rich annealing was restored to values (similar to 10(8)-10(9) Omega cm). We observed, however, decrease of mobility-lifetime product of electrons from 10(-3)cm(2)/Vs to 10(-4)cm(2)/Vs. In order to understand the reason of this decrease we performed a study of point defects before and after annealing by thermoelectric effect spectroscopy. It shows a decrease of concentrations of most deep levels after two-step annealing. This behavior is completely different compared to past annealing studies, where concentration of deep
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GAP102%2F10%2F0148" target="_blank" >GAP102/10/0148: Influence of Te inclusions on performance of CdTe and CdZnTe radiation detectors</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Instrumentation
ISSN
1748-0221
e-ISSN
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Volume of the periodical
7
Issue of the periodical within the volume
12
Country of publishing house
GB - UNITED KINGDOM
Number of pages
4
Pages from-to
"C11001"-"C11004"
UT code for WoS article
000310835200001
EID of the result in the Scopus database
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