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Use of the drift-time method to measure the electron lifetime in long-drift-length CdZnTe detectors

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F16%3A10328936" target="_blank" >RIV/00216208:11320/16:10328936 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1063/1.4962540" target="_blank" >http://dx.doi.org/10.1063/1.4962540</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/1.4962540" target="_blank" >10.1063/1.4962540</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Use of the drift-time method to measure the electron lifetime in long-drift-length CdZnTe detectors

  • Original language description

    The traditional method for electron lifetime measurements of CdZnTe (CZT) detectors relies on using the Hecht equation. The procedure involves measuring the dependence of the detector response on the applied bias to evaluate the mu tau product, which in turn can be converted into the carrier lifetime. Despite general acceptance of this technique, which is very convenient for comparative testing of different CZT materials, the assumption of a constant electric field inside a detector is unjustified. In the Hecht equation, this assumption means that the drift time would be a linear function of the distance. This condition is not fulfilled in practice at low applied biases, where the Hecht equation is most sensitive to the mu tau product. As a result, researchers usually take measurements at relatively high biases, which work well in the case of the low mu tau-product material, <10(-3) cm(2)/V, but give significantly underestimated values for the case of high mu tau-product crystals. In this work, we applied the drift-time method to measure the electron lifetimes in long-drift-length (4 cm) standard-grade CZT detectors produced by the Redlen Technologies. We found that the electron mu tau product of tested crystals is in the range 0.1-0.2 cm(2)/V, which is an order of the magnitude higher than any value previously reported for a CZT material. In comparison, using the Hecht equation fitting, we obtained mu tau = 2.3 x 10(-2) cm(2)/V for a 2-mm thin planar detector fabricated from the same CZT material. Published by AIP Publishing.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2016

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Applied Physics

  • ISSN

    0021-8979

  • e-ISSN

  • Volume of the periodical

    120

  • Issue of the periodical within the volume

    10

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    8

  • Pages from-to

  • UT code for WoS article

    000384247900019

  • EID of the result in the Scopus database

    2-s2.0-84987985159