Charge Transport and Space-Charge Formation in Cd(1-x)Zn(x)Te(1-y)Se(y) Radiation Detectors
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F21%3A10431983" target="_blank" >RIV/00216208:11320/21:10431983 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=dKXHHpF4dx" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=dKXHHpF4dx</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevApplied.15.054058" target="_blank" >10.1103/PhysRevApplied.15.054058</a>
Alternative languages
Result language
angličtina
Original language name
Charge Transport and Space-Charge Formation in Cd(1-x)Zn(x)Te(1-y)Se(y) Radiation Detectors
Original language description
The electron- and hole-transport properties in cadmium zinc telluride selenide (CZTS) crystals are studied using a laser-induced transient-current technique with pulsed and dc bias. The internal electric field profile and velocity of surface recombination are determined by Monte Carlo simulations of electron and hole transient currents combined with a numerical solution of the drift-diffusion equation coupled with Poisson's equation. Electron and hole drift mobilities of mu(e) = 830 cm^2/Vs and mu(h) = 40 cm^2/Vs, respectively, are determined. We also develop a simple technique for evaluating surface recombination directly from measured current waveforms without the need for numerical simulation. The good quality of the prepared detector at pulsed bias, with electron- and hole-mobility-lifetime products of (mu t )(e) = 1.9 x 10^-3 cm^2/V and (mu t )(h) = 1.4 x 10-4 cm^2/V, respectively, are observed. The formation of a positive space charge, originating from hole injection combined with a recombination level, is found. We observe a significant position dependence of the lifetime of electrons and holes in dc bias due to hole injection. The experiment is successfully fitted by a simple model dominated by a single deep recombination level with an energy of Et = EC - 0.73 eV; concentration of 7.3 x 10^11 cm^-3; and electron- and hole-capture cross sections of 3.5 x 10^-14 cm^2 and 6.5 x 10^-14 cm^2, respectively.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10306 - Optics (including laser optics and quantum optics)
Result continuities
Project
<a href="/en/project/GA18-12449S" target="_blank" >GA18-12449S: Charge transport in SiC radiation detectors.</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physical Review Applied
ISSN
2331-7019
e-ISSN
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Volume of the periodical
15
Issue of the periodical within the volume
5
Country of publishing house
US - UNITED STATES
Number of pages
8
Pages from-to
054058
UT code for WoS article
000657702500003
EID of the result in the Scopus database
2-s2.0-85107076829