Emergence of state at Fermi level due to the formation of In-Sn heterodimers on Si(100)-2 x 1
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10191451" target="_blank" >RIV/00216208:11320/13:10191451 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1103/PhysRevB.88.205406" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.88.205406</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.88.205406" target="_blank" >10.1103/PhysRevB.88.205406</a>
Alternative languages
Result language
angličtina
Original language name
Emergence of state at Fermi level due to the formation of In-Sn heterodimers on Si(100)-2 x 1
Original language description
Structure and electronic properties of one-dimensional bimetallic In-Sn chains formed by codeposition on a Si(100)-2x1 surface are studied experimentally by means of scanning tunneling microscopy (STM) and scanning tunneling spectroscopy and theoretically using density-functional theory. The codeposition of In with a small amount of Sn allows separation of various In-Sn structures and their identification in empty-state STM images. A 16 x 2 supercell is employed to model an indium atomic chain in whichone or two Sn atoms are embedded. This atomic model is used to identify unambiguously various In-Sn structures observed experimentally. At low Sn: In ratio the codeposition results in strongly preferential formation of isolated heterogeneous In-Sn dimers. The In-Sn dimer induces tilting of the neighboring homogeneous In-In dimer accompanied with a charge transfer. Consequently a localized state at Fermi level appears. These results contribute to a discussion on possible transport of elec
Czech name
—
Czech description
—
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
—
Result continuities
Project
<a href="/en/project/GAP204%2F10%2F0952" target="_blank" >GAP204/10/0952: Atomic scale study of bimetallic nanostructures on the Si(100) surface</a><br>
Continuities
S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physical Review B - Condensed Matter and Materials Physics
ISSN
1098-0121
e-ISSN
—
Volume of the periodical
88
Issue of the periodical within the volume
20
Country of publishing house
US - UNITED STATES
Number of pages
7
Pages from-to
—
UT code for WoS article
000326821200003
EID of the result in the Scopus database
—