Defect pairing in Fe-doped SnS van der Waals crystals: a photoemission and scanning tunneling microscopy study

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00574630" target="_blank" >RIV/68378271:_____/23:00574630 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11320/23:10468742 RIV/00216275:25310/23:39920775 RIV/00216224:14310/23:00132757
Result on the web
<a href="https://hdl.handle.net/11104/0347702" target="_blank" >https://hdl.handle.net/11104/0347702</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1039/d3nr01905e" target="_blank" >10.1039/d3nr01905e</a>

Result language
angličtina
Original language name
Defect pairing in Fe-doped SnS van der Waals crystals: a photoemission and scanning tunneling microscopy study
Original language description
We investigate the effect of low concentrations of iron on the physical properties of SnS van der Waals crystals grown from the melt. By means of scanning tunneling microscopy (STM) and photoemission spectroscopy we study Fe-induced defects and observe an electron doping effect in the band structure of the native p-type SnS semiconductor. Atomically resolved and bias dependent STM data of characteristic defects are compared to ab initio density functional theory simulations of vacancy (VS and VSn), Fe substitutional (FeSn), and Fe interstitial (Feint) defects.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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