Electric field response to infrared illumination in CdTe/CdZnTe detectors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10272518" target="_blank" >RIV/00216208:11320/14:10272518 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/1748-0221/9/04/C04038" target="_blank" >http://dx.doi.org/10.1088/1748-0221/9/04/C04038</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1748-0221/9/04/C04038" target="_blank" >10.1088/1748-0221/9/04/C04038</a>

Result language
angličtina
Original language name
Electric field response to infrared illumination in CdTe/CdZnTe detectors
Original language description
We investigated the Pockels electro-optic effect in semi-insulating detector-grade cadmium telluride doped with indium without and with a high optical flux. We employed the Pockels electro-optic effect setup with two perpendicular sources of light. We observed that without illumination positive space charge is present in the sample due to band bending at the CdTe/Au interface. After illumination with above-bandgap red light the electric field became less distorted due to filling of the ionized donors with trapped electrons. We found the energy levels of electron traps in detector-grade CdTe at approximately 0.7 eV, 0.85 eV and 1.1 eV below the conduction band.
Czech name
—
Czech description
—

Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
—

Project
<a href="/en/project/GA13-13671S" target="_blank" >GA13-13671S: X-ray detectors for high photon fluxes</a><br>
Continuities
S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)