The role of the space charge region in surface photovoltaic effect

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10283093" target="_blank" >RIV/00216208:11320/14:10283093 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1063/1.4893973" target="_blank" >http://dx.doi.org/10.1063/1.4893973</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4893973" target="_blank" >10.1063/1.4893973</a>

Result language

angličtina

Original language name

The role of the space charge region in surface photovoltaic effect

Original language description

The surface photovoltage method is an important tool for semiconductor characterization. Evaluation of photocarrier diffusion length represents one of the most essential applications of this method. The technique is usually limited to samples with thickneutral bulk and thin space charge region (SCR) at the illuminated surface. The purpose of this paper is to remove these restrictions by introducing a more general model. Two different transport processes for the photogenerated carriers are assumed: drift in the SCR and diffusion in the neutral bulk. It was found that the SCR and the bulk contribute to the overall signal independently even in the case of recombination in the depletion region. The presented surface photovoltage technique was successfullyapplied to samples of different thickness and with differently thick space charge region at the surface. The diffusion length of the minority carrier in inorganic semiconductors as well as the diffusion length of excitons in organic mate

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2014

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

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Volume of the periodical

116

Issue of the periodical within the volume

8

Country of publishing house

US - UNITED STATES

Number of pages

8

Pages from-to

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UT code for WoS article

000342821600035

EID of the result in the Scopus database

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