Controlled epitaxial graphene growth within removable amorphous carbon corrals

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10288699" target="_blank" >RIV/00216208:11320/14:10288699 - isvavai.cz</a>

Result on the web

<a href="http://scitation.aip.org/content/aip/journal/apl/105/2/10.1063/1.4890499" target="_blank" >http://scitation.aip.org/content/aip/journal/apl/105/2/10.1063/1.4890499</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4890499" target="_blank" >10.1063/1.4890499</a>

Result language

angličtina

Original language name

Controlled epitaxial graphene growth within removable amorphous carbon corrals

Original language description

We address the question of control of the silicon carbide (SiC) steps and terraces under epitaxial graphene on SiC and demonstrate amorphous carbon (aC) corrals as an ideal method to pin SiC surface steps. aC is compatible with graphene growth, structurally stable at high temperatures, and can be removed after graphene growth. For this, aC is first evaporated and patterned on SiC, then annealed in the graphene growth furnace. There at temperatures above 1200 degrees C, mobile SiC steps accumulate at theaC corral that provide effective step flow barriers. Aligned step free regions are thereby formed for subsequent graphene growth at temperatures above 1330 degrees C. Atomic force microscopy imaging supports the formation of step-free terraces on SiC with the step morphology aligned to the aC corrals. Raman spectroscopy indicates the presence of good graphene sheets on the step-free terraces.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2014

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Applied Physics Letters

ISSN

0003-6951

e-ISSN

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Volume of the periodical

105

Issue of the periodical within the volume

2

Country of publishing house

US - UNITED STATES

Number of pages

5

Pages from-to

1-5

UT code for WoS article

000341151400064

EID of the result in the Scopus database

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