Synthesis of graphene on SiC substrate via Ni-silicidation reactions

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F12%3A43894326" target="_blank" >RIV/60461373:22310/12:43894326 - isvavai.cz</a>

Alternative codes found

RIV/60461373:22810/12:43894326

Result on the web

<a href="http://dx.doi.org/10.1016/j.tsf.2012.03.105" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2012.03.105</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2012.03.105" target="_blank" >10.1016/j.tsf.2012.03.105</a>

Result language

angličtina

Original language name

Synthesis of graphene on SiC substrate via Ni-silicidation reactions

Original language description

In this work, the features of graphene layers are studied with the aim of preparing the thinnest layers possible. The graphene layers were prepared by the annealing of Ni/SiC structures. The main advantage of this process is a relatively low temperaturecompared with the method of graphene epitaxial growth on SiC and short annealing times compared with the chemical vapor deposition method. We prepared graphene layers from several Ni/SiC structures in which the Ni layer thickness ranged from 1 to 200 nm.The parameters of the annealing process (temperature, rate of temperature increase, annealing time) were modified during the experiments. The formed graphene layers were analyzed by means of Raman spectroscopy. From the spectra, the basic parameters ofgraphene, such as the number of carbon layers and crystallinity. were determined. The annealing of the Ni(200 nm)/SiC structure at 1080 degrees C for 10 s, produced graphene in the form of 3-4 carbon monolayers. The value was verified by

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JJ - Other materials

OECD FORD branch

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Project

<a href="/en/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Growth and processing of graphene layers on silicon carbide</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Thin Solid Films

ISSN

0040-6090

e-ISSN

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Volume of the periodical

520

Issue of the periodical within the volume

16

Country of publishing house

GB - UNITED KINGDOM

Number of pages

4

Pages from-to

5215-5218

UT code for WoS article

000305719000019

EID of the result in the Scopus database

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